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4 September 2008 Light propagation in one-dimensional photonic finite systems (Si/a-SiO2)m with defects
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Using transfer matrix method transmission spectra for the layered ordered structures of (Si/a - SiO2)m with defect were investigated as in constant inductivity as with the account of dispersion of refraction index. It was found that the account of the refraction index in silicon has a relatively weak effect on position of the stop-bands in the considered photon-crystalline but considerably changes location and the value of peaks in the transmission spectrum connected with the presence of defect in the structure. Moreover, the propagation of electromagnetic waves through one-dimensional defect photon-crystalline structure was investigated by numeric solution of Maxwell equations by the FDTD method. The cases of transmitted wave and spontaneous emission were simulated. Localization of electrons and photons in the defect ordered structures were shown to be explicitly different.
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Yury K. Timoshenko, Valentina A. Shunina, Yuri V. Smirnov, and Oxana V. Kazarina "Light propagation in one-dimensional photonic finite systems (Si/a-SiO2)m with defects", Proc. SPIE 7030, Nanophotonic Materials V, 703018 (4 September 2008);


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