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10 March 1987 Kramers-Kronig Analysis Of Electro-Optical Switching In Silicon
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Proceedings Volume 0704, Integrated Optical Circuit Engineering IV; (1987) https://doi.org/10.1117/12.937193
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
Crystalline silicon (c-Si) exhibits two electro-optical effects that are suitable for device-application in guided-wave modulators and switches. The effects are electrorefraction and free-carrier dispersion. The dispersion is controlled by electrical injection or electrical depletion of charge carriers. The magnitude of these effects has been calculated in this paper. The results for c-Si are compared to those for GaAs and InP. Low-loss guided-wave electro-optical phase modulation structures in c-Si are proposed here.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Soref and Brian R. Bennett "Kramers-Kronig Analysis Of Electro-Optical Switching In Silicon", Proc. SPIE 0704, Integrated Optical Circuit Engineering IV, (10 March 1987); https://doi.org/10.1117/12.937193
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