Ultraviolet optical functions of ZnO and Ga2O3 thin films

Shizuo Fujita

doi:10.1117/12.796141

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10 September 2008 Ultraviolet optical functions of ZnO and Ga₂O₃ thin films

Shizuo Fujita

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Proceedings Volume 7041, Nanostructured Thin Films; 70410M (2008) https://doi.org/10.1117/12.796141
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

Oxide semiconductors are essentially stable and environmental-friendly materials as well as possessing unique multifunctional properties in conjunction with ultraviolet (UV) to deep UV (DUV) optical functions. Among them ZnO and Ga₂O₃, having the bandgaps of about 3.3 and 4.9eV, respectively, are the promising candidates for exploring their UV applications. This paper reports recent advances of ZnO and Ga₂O₃ semiconductors focusing on their UV to DUV optical functions and device applications. Since ZnO has reached to the actual application stage and future development of the growth with chemical vapor deposition (CVD) is now strongly requested for mass production, here we introduce a novel CVD growth technique, that is, ultrasonic spray assisted CVD, allowing safe and low-cost growth of high quality ZnO-based films. Homoepitaxy on ZnO substrates resulted in step-flow growth, which has hardly been achieved by metalorganic CVD. Ga₂O₃ is expected for its DUV functions being supported by the availability of Ga₂O₃ bulk substrates. We show the potential applications of Ga₂O₃ substrates for highly sensitive DUV photodetectors as well as homoepitaxial step-flow growth of Ga₂O₃ thin films by molecular beam epitaxy.

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Shizuo Fujita "Ultraviolet optical functions of ZnO and Ga₂O₃ thin films", Proc. SPIE 7041, Nanostructured Thin Films, 70410M (10 September 2008); https://doi.org/10.1117/12.796141

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