Paper
3 September 2008 Frontside-illuminated quantum well photodetector for FIR range
Author Affiliations +
Abstract
We have demonstrated the operation of a far-infrared frontside-illuminated GaAs/AlGaAs quantum well photodetector based on intersubband absorption in a quantum well (QW) with a targeted peak frequency of 3 THz (wavelength: ~100 μm). A multiple quantum well structure consists of 20 periods of 18 nm QWs interleaved by 80 nm barriers with an Al alloy content of 2%. We measured the following performance characteristics: dark current, responsivity, and spectral response. A responsivity of 13 mA/W at an electric bias of 40 mV and an operating temperature of 3 K was obtained with a peak response close to the designed detection frequency. The dark current density was a few μA/cm2 and was limited by thermally assisted tunneling through the barriers. We looked also at possible designs to optimize the device's performance.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikhail Patrashin and Iwao Hosako "Frontside-illuminated quantum well photodetector for FIR range", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550M (3 September 2008); https://doi.org/10.1117/12.797653
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Terahertz radiation

Photodetectors

Sensors

Doping

Absorption

Aluminum

RELATED CONTENT

THz quantum semiconductor devices
Proceedings of SPIE (January 23 2006)
Terahertz quantum well photodetectors
Proceedings of SPIE (August 29 2006)
Heterojunction detectors for terahertz applications
Proceedings of SPIE (November 17 2005)
Terahertz quantum well photodetectors
Proceedings of SPIE (November 17 2005)

Back to Top