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3 September 2008 Frontside-illuminated quantum well photodetector for FIR range
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Abstract
We have demonstrated the operation of a far-infrared frontside-illuminated GaAs/AlGaAs quantum well photodetector based on intersubband absorption in a quantum well (QW) with a targeted peak frequency of 3 THz (wavelength: ~100 μm). A multiple quantum well structure consists of 20 periods of 18 nm QWs interleaved by 80 nm barriers with an Al alloy content of 2%. We measured the following performance characteristics: dark current, responsivity, and spectral response. A responsivity of 13 mA/W at an electric bias of 40 mV and an operating temperature of 3 K was obtained with a peak response close to the designed detection frequency. The dark current density was a few μA/cm2 and was limited by thermally assisted tunneling through the barriers. We looked also at possible designs to optimize the device's performance.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikhail Patrashin and Iwao Hosako "Frontside-illuminated quantum well photodetector for FIR range", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550M (3 September 2008); https://doi.org/10.1117/12.797653
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