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26 August 2008 High-performance SiC avalanche photodiode for single ultraviolet photon detection
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Sensitive ultraviolet photodetectors are essential components for a growing number of civilian and military applications. In this paper, we report 4H Silicon Carbide (SiC) avalanche photodiodes (APDs) with a p-i-n structure. These APDs, range in diameter from 180 μm to 250μm, exhibit very low dark current (10s of pA at avalanche gain of 1000) and high gain in linear-mode operation. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of a 250 μm recessed-window device at zero bias is estimated to be 6×1014 ohms. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1×1014 cmHz 1/2 W-1, has been achieved. Single ultraviolet photon detection in Geiger-mode operation with gated quenching is also described. In this paper, we report single photon detection efficiency (SPDE) of 30% at 280 nm with a dark count probability (DCP) of 8×10-4.
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Xiaogang Bai, Han-din Liu, Dion McIntosh, and Joe C. Campbell "High-performance SiC avalanche photodiode for single ultraviolet photon detection", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550Q (26 August 2008);

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