Generation of self-focused electron beam by pyroelectric/photogalvanic crystal accelerators

N. V. Kukhtarev; T. V. Kukhtareva; G. Stargell; V. Samoilov; V. Razbudey

doi:10.1117/12.796551

25 August 2008 Generation of self-focused electron beam by pyroelectric/photogalvanic crystal accelerators

N. V. Kukhtarev, T. V. Kukhtareva, G. Stargell, V. Samoilov, V. Razbudey

Proceedings Volume 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II; 70561O (2008) https://doi.org/10.1117/12.796551
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

We have observed generation of the electron beam by the pyroelectric crystal placed in the vacuum chamber. Different pyroelctric materials, Fe-doped LiNbO₃ and L-alanine doped TGS crystals, were tested. Crystals of L-alanine doped TGS (LATGS) were grown by evaporation of the solution with 10% initial concentration of L-alanine under T=45°C (somewhat below phase transition temperature T_C = 49.9°C). In this case crystallization proceeds immediately in the polar phase Heating/cooling cycles of the crystals in the vacuum (P~ 1-5 mTorr) produce uncompensated surface charges and strong electric field (~ 100kV/cm) on the polar crystal faces. These fringing fields ionize ambient gas and accelerate electrons to high energies (~100 KeV). For photosensitive LiNbO₃ crystal electrical charging and generation of electrons may be done by laser illumination, via photogalvanic effect. These generated electrons can be detected by the fluorescent ZnS screen or by the X-rays produced by placing copper plate in the electron beam. Model that explains and figures that depict the self-focusing of the electron beam is presented.

Citation Download Citation

N. V. Kukhtarev, T. V. Kukhtareva, G. Stargell, V. Samoilov, and V. Razbudey "Generation of self-focused electron beam by pyroelectric/photogalvanic crystal accelerators", Proc. SPIE 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II, 70561O (25 August 2008); https://doi.org/10.1117/12.796551

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