Paper
2 September 2008 Highly efficient (infra)-red-conversion of InGaN light emitting diodes by nanocrystals, enhanced by color selective mirrors
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Abstract
Colloidal nanocrystal layers deposited onto the enclosure of InGaN light emitting diodes are demonstrated to operate as nano-phosphors for color conversion with high color stability. Dependent on the choice of the nanocrystal materials, either CdSe/ZnS or PbS nanocrystals are applied, the diode emission at 470 nm is converted to the red or to infrared light, with similar quantum efficiencies. The color conversion is further improved by dielectric mirrors with high reflectivity at the emission band of the nanocrystals, resulting in an almost doubling of the nanocrystal light extraction from the devices, which increases the nanocrystal device efficiency up to 19.1%.
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J. Roither, M. V. Kovalenko, and W. Heiss "Highly efficient (infra)-red-conversion of InGaN light emitting diodes by nanocrystals, enhanced by color selective mirrors", Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580Y (2 September 2008); https://doi.org/10.1117/12.794987
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KEYWORDS
Nanocrystals

Light emitting diodes

Mirrors

Indium gallium nitride

Lead

Quantum efficiency

Reflectivity

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