Surface metrology of silicon wafers using a femtosecond pulse laser

Taekmin Kwon; Ki-Nam Joo; Seung-Woo Kim

doi:10.1117/12.797040

11 August 2008 Surface metrology of silicon wafers using a femtosecond pulse laser

Taekmin Kwon, Ki-Nam Joo, Seung-Woo Kim

Proceedings Volume 7063, Interferometry XIV: Techniques and Analysis; 706310 (2008) https://doi.org/10.1117/12.797040
Event: Optical Engineering + Applications, 2008, San Diego, California, United States

Abstract

We investigated the technical possibility of exploiting a femtosecond pulse laser as the light source of low-coherence interferometry for topographical inspection of silicon wafers. The intention was to measure both the front- and rear-surface profiles of a silicon wafer simultaneously by illuminating from one side of the wafer only. To the end, the spectrum of the femtosecond laser was widened using a photonic crystal fiber to yield wavelengths over the particular range of 1000 to 1200 nm, which is not only transmittable through silicon but also detectable by an ordinary CCD photodetector array. This tomographic scheme enables complete measurement of thickness profile and also detection of internal voids such as cracks residing inside the wafer with high lateral and depth resolutions, which could be useful for nondestructive testing of multi-layered packages of silicon wafers.

Citation Download Citation

Taekmin Kwon, Ki-Nam Joo, and Seung-Woo Kim "Surface metrology of silicon wafers using a femtosecond pulse laser", Proc. SPIE 7063, Interferometry XIV: Techniques and Analysis, 706310 (11 August 2008); https://doi.org/10.1117/12.797040

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