Paper
4 September 2008 Purification, crystal growth and detector performance of TlBr
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Abstract
TlBr is a promising semiconductor for gamma-ray detection at room temperature, but it has to be extremely pure to become useful. We investigated the purification and crystal growth of TlBr to improve the mobility and lifetime of charge carriers, and produce TlBr detectors for radioisotopic detection. Custom equipment was built for purification and crystal growth of TlBr. The zone refining and crystal growth were done in a horizontal configuration. The process parameters were optimized and detector grade material with an electron mobility-lifetime product of up to 3x10-3 cm2/V has been produced. The material analysis and detector characterization results are included.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexei V. Churilov, William M. Higgins, Guido Ciampi, Hadong Kim, Leonard J. Cirignano, Fred Olschner, and Kanai S. Shah "Purification, crystal growth and detector performance of TlBr", Proc. SPIE 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X, 70790K (4 September 2008); https://doi.org/10.1117/12.794838
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Cited by 25 scholarly publications.
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KEYWORDS
Sensors

Crystals

Diffraction

Etching

Sensor performance

Semiconductors

Annealing

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