Paper
4 September 2008 Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors
Author Affiliations +
Abstract
Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 μm and/or lower grits of Al2O3 abrasive papers including final polishing with 0.05-μm particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO3:H20:K2Cr2O7). The material removal rate (etching rate) from the crystals was found to be 10 μm, 30 μm, and 15 μm per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Hossain, S. Babalola, A. E. Bolotnikov, G. S. Camarda, Y. Cui, G. Yang, M. Guo, D. Kochanowska, A. Mycielski, A. Burger, and R. B. James "Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors", Proc. SPIE 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X, 70791E (4 September 2008); https://doi.org/10.1117/12.796797
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Surface finishing

Crystals

Etching

Polishing

Sensors

Atomic force microscopy

Wet etching

Back to Top