Epitaxial lead-chalcogenides on Si and BaF2 for mid-IR detectors and emitters including cavities

H. Zogg; M. Arnold; F. Felder; M. Rahim; M. Fill; D. Boye

doi:10.1117/12.797849

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3 September 2008 Epitaxial lead-chalcogenides on Si and BaF₂ for mid-IR detectors and emitters including cavities

H. Zogg, M. Arnold, F. Felder, M. Rahim, M. Fill, D. Boye

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Proceedings Volume 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI; 70820H (2008) https://doi.org/10.1117/12.797849
Event: Optical Engineering + Applications, 2008, San Diego, California, United States

Abstract

We describe two new optoelectronic mid-IR devices employing narrow gap lead-chalcogenide (IV-VI) layers on Si or BaF₂ substrates: (1) Tunable resonant cavity enhanced detectors (RCED) for the mid-infrared with an epitaxial Bragg mirror and a thin p-n+ heterojunction as detecting layer have been realized for the first time. They are tunable by moving the top micro-electro-mechanical micromirror, thus changing the cavity length. (2) Optically pumped vertical external cavity surface emitting lasers (VECSEL) with an emission wavelength above 5 μm were fabricated, for the first time, too. Presently they operate with an output power of up to 260 mW_p and up to 175 K. With improved appropriate precautions for efficient heat removal, still much higher operation temperatures are expected. Both resonant cavity enhanced devices may be used as miniature infrared spectrometers to cover the spectral range from < 3 μm up to > 20 μm.

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H. Zogg, M. Arnold, F. Felder, M. Rahim, M. Fill, and D. Boye "Epitaxial lead-chalcogenides on Si and BaF₂ for mid-IR detectors and emitters including cavities", Proc. SPIE 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI, 70820H (3 September 2008); https://doi.org/10.1117/12.797849

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