Silicon p-i-n focal plane arrays at Raytheon

Sean Kilcoyne; Neil Malone; Micky Harris; John Vampola; Decosta Lindsay

doi:10.1117/12.798580

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3 September 2008 Silicon p-i-n focal plane arrays at Raytheon

Sean Kilcoyne, Neil Malone, Micky Harris, John Vampola, Decosta Lindsay

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Proceedings Volume 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI; 70820J (2008) https://doi.org/10.1117/12.798580
Event: Optical Engineering + Applications, 2008, San Diego, California, United States

Abstract

Raytheon has been building silicon p-i-n (Si-PIN) detector arrays for the past twenty years for various remote sensing instruments such as MODIS, EO-1, and Landsat now on orbit. See Figure 1. The Si-PIN technology at Raytheon has matured in the past five years with the addition of a dedicated silicon wafer fab, improvements in hybrid technologies, and the enhanced digital functionality of RVS custom read out integrated circuits (ROICs). This paper will discuss the advantages that Raytheon Si-PIN arrays offer over conventional CCDs and monolithic CMOS imagers such as 100% optical fill factor, high QE (visible - near IR), high MTF, and radiation hardness.

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Sean Kilcoyne, Neil Malone, Micky Harris, John Vampola, and Decosta Lindsay "Silicon p-i-n focal plane arrays at Raytheon", Proc. SPIE 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI, 70820J (3 September 2008); https://doi.org/10.1117/12.798580

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