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26 August 2008 Electronic devices based upon Germanium nano-crystals with durability to strong neutron irradiation
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In this paper we present the preliminary experimental characterization of electronic devices based upon Germanium nano-crystals (nc-Ge) embedded in thick SiO2 films grown on a Si substrate. The samples were prepared using Ge ion implantation followed by thermal annealing. Typical diameter of the nc-Ge is shown to be in the range of 4- 10nm. Gold (Au) contacts were deposited on the top of the oxide surface allowing measurements of the electronic properties. We present preliminary experimental results of electronic properties of the nc-Ge based devices including current-voltage (I-V) and capacitance-voltage (C-V) curves of the nano-devices while illuminated by white light and an external laser at a wavelength of 532nm for various levels of intensity. The characterization curves were also obtained at different temperatures. The proposed technology of devices based on nc-Ge was proven to be insensitive to high doses of irradiation by neutrons in a research nuclear reactor, which suggests that these nc-Ge devices can be used under extreme working conditions such as strong cosmic radiation appearing in outer space.
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Itamar Baron, Shai Levy, Avraham Chelly, Zeev Zalevsky, Ofer Limon, Shaobo Dun, Tiecheng Lu, and Issai Shlimak "Electronic devices based upon Germanium nano-crystals with durability to strong neutron irradiation", Proc. SPIE 7095, Nanophotonics and Macrophotonics for Space Environments II, 709502 (26 August 2008);

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