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26 August 2008High performance of IR detectors due to controllable kinetics in quantum-dot structures
To optimize the photodetector based on quantum-dot (QD) structures, we develop and exploit a model of the roomtemperature
QD photodetector. Using analytical modeling and Monte-Carlo simulations, we investigate photoelectron
kinetics, i.e. capture and transit processes, as functions of selective doping of a QD structure, its geometry, and electric
field applied. Results of our simulations demonstrate that the photoelectron capture is substantially enhanced in strong
electric fields. Detailed analysis shows that effects of the electric field on electron capture in the structures with barriers
are not sensitive to the redistribution of electrons between valleys. Thus, most data find adequate explanation in the
model of hot-electron transport in the potential relief of quantum dots. We also show that the photoelectron kinetics is
very sensitive to potential barriers of intentionally or unintentionally charged quantum dots. The capture processes can
be substantially suppressed by a proper choice of the geometry of a QD structure and modulation doping. The suggested
model is in agreement with the available experimental results. Manageable kinetics will allow one to employ QDIP as an
adaptive detector with changing parameters.
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V. Mitin, A. Sergeev, Li-Hsin Chien, N. Vagidov, "High performance of IR detectors due to controllable kinetics in quantum-dot structures," Proc. SPIE 7095, Nanophotonics and Macrophotonics for Space Environments II, 70950K (26 August 2008); https://doi.org/10.1117/12.793325