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17 October 2008 Impact of the OMOG substrate on 32 nm mask OPC inspectability, defect sensitivity, and mask design rule restrictions
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Abstract
Aggressive optical proximity correction (OPC) has enabled the extension of advanced lithographic technologies to the 32nm node. The associated sub-resolution features, feature-feature spacings, and fragmented edges in the design data are difficult to reproduce on masks and even more difficult to inspect. The patterns themselves must be differentiated from defects for inspectability, while the ability to recognize small deviations must be maintained for sensitivity. This must be done without restricting necessary OPC design features. The semi-transparent nature of industry-standard 6% attenuated phase shift substrates introduces a host of problems relative to inspectable dimensions and subsequent defect sensitivities. The result is a reduction in inspectability, defect sensitivity and the inability to inspect smaller critical dimensions and OPCed features. The introduction of a binary-type attenuated phase shift film improves the ability to inspect smaller critical dimensions and smaller OPC features without loss of inspectability and sensitivity extending the capability of existing inspection hardware for 32nm ground rule masks. This paper introduces inspection characterization results for this new film, opaque MoSi on glass (referred to as OMOG in this paper) and draws a correlation between the film's transmission qualities and inspectability of 32nm OPC features. The paper will further show a correlation between OPC feature size and defect sensitivity for 32nm ground rule designs. Aerial Image (AIMS) analysis will be used to identify areas where the enhanced inspection capability can be leveraged to avoid unnecessary restrictions on OPC.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karen Badger, Yutaka Kodera, Emily Gallagher, and Mark Lawliss "Impact of the OMOG substrate on 32 nm mask OPC inspectability, defect sensitivity, and mask design rule restrictions", Proc. SPIE 7122, Photomask Technology 2008, 71220A (17 October 2008); https://doi.org/10.1117/12.801951
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