OPC hotspot identification challenges: ORC vs. PWQ on wafer

Andre Poock; Sarah McGowan; Francois Weisbuch; Guido Schnasse; Rajesh Ghaskadvi

doi:10.1117/12.801574

17 October 2008 OPC hotspot identification challenges: ORC vs. PWQ on wafer

Andre Poock, Sarah McGowan, Francois Weisbuch, Guido Schnasse, Rajesh Ghaskadvi

Proceedings Volume 7122, Photomask Technology 2008; 71220Y (2008) https://doi.org/10.1117/12.801574
Event: SPIE Photomask Technology, 2008, Monterey, California, United States

Abstract

The identification of OPC induced litho hotspots within the product design is essential and a must to make sure that a new OPC model is working correctly and does no harm to the design and future product. Several techniques and methods for OPC verification and identification of hotspots are known and long adopted within the field. An optical rule check done by the simulation software after OPC is one way of identifying hotspots within the design of the whole chip. This is typically done by using a DRC-type width or space check on simulation contours (nominal exposure contour or process window contours). However, the pass/fail nature of this check at a single CD value requires good calibration of the simulation model to avoid false positives and ease of disposition at tapeout. Another method is the process window qualification method which uses the defect inspection of a focus exposure matrix wafer for OPC hotspot identification. However, this can not be done prior to ordering a mask. Based on a 45nm line space layer OPC qualification, we will demonstrate how optical rule check and process window qualification is performed, what the individual results will be, and how they can be used for OPC quality evaluation. The general goal of this work is to show the capabilities of optical rule check and process window qualification, compare both methods, and detect limitations.

Citation Download Citation

Andre Poock, Sarah McGowan, Francois Weisbuch, Guido Schnasse, and Rajesh Ghaskadvi "OPC hotspot identification challenges: ORC vs. PWQ on wafer", Proc. SPIE 7122, Photomask Technology 2008, 71220Y (17 October 2008); https://doi.org/10.1117/12.801574

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available