High resolution inspection with wafer plane die: database defect detection

Carl Hess; Mark Wihl; Rui-fang Shi; Yalin Xiong; Song Pang

doi:10.1117/12.801867

17 October 2008 High resolution inspection with wafer plane die: database defect detection

Carl Hess, Mark Wihl, Rui-fang Shi, Yalin Xiong, Song Pang

Author Affiliations +

Proceedings Volume 7122, Photomask Technology 2008; 71221A (2008) https://doi.org/10.1117/12.801867
Event: SPIE Photomask Technology, 2008, Monterey, California, United States

Abstract

High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yieldlimiting mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newlydeveloped Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects on wafers. This approach has several important features. The ability to ignore non-printing defects and to apply additional effective sensitivity in high MEEF areas enables advanced node development. In addition, the modeling allows the inclusion of important polarization effects that occur in the resist for high NA operation. This allows for the results to better match wafer print results compared to alternate approaches. Finally, the simulation easily allows for the application of arbitrary illumination profiles. With this approach, users of WPI can make use of unique or custom scanner illumination profiles. This allows the more precise modeling of profiles without inspection system hardware modification or loss of company intellectual property. A previous paper [1] introduced WPI in D:D mode. This paper examines the operation and results for WPI in Die:Database mode.

Citation Download Citation

Carl Hess, Mark Wihl, Rui-fang Shi, Yalin Xiong, and Song Pang "High resolution inspection with wafer plane die: database defect detection", Proc. SPIE 7122, Photomask Technology 2008, 71221A (17 October 2008); https://doi.org/10.1117/12.801867

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