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17 October 2008High resolution inspection with wafer plane die: database defect detection
High Resolution reticle inspection is well-established as a proven, effective, and efficient means of detecting yieldlimiting
mask defects as well as defects which are not immediately yield-limiting yet can enable manufacturing process
improvements. Historically, RAPID products have enabled detection of both classes of these defects. The newlydeveloped
Wafer Plane Inspection (WPI) detector technology meets the needs of some advanced mask manufacturers to
identify the lithographically-significant defects while ignoring the other non-lithographically-significant defects. Wafer
Plane Inspection accomplishes this goal by performing defect detection based on a modeled image of how the mask
features would actually print in the photoresist. This has the effect of reducing sensitivity to non-printing defects while
enabling higher sensitivity focused in high MEEF areas where small reticle defects still yield significant printing defects
on wafers.
This approach has several important features. The ability to ignore non-printing defects and to apply additional effective
sensitivity in high MEEF areas enables advanced node development. In addition, the modeling allows the inclusion of
important polarization effects that occur in the resist for high NA operation. This allows for the results to better match
wafer print results compared to alternate approaches. Finally, the simulation easily allows for the application of
arbitrary illumination profiles. With this approach, users of WPI can make use of unique or custom scanner illumination
profiles. This allows the more precise modeling of profiles without inspection system hardware modification or loss of
company intellectual property.
A previous paper [1] introduced WPI in D:D mode. This paper examines the operation and results for WPI in
Die:Database mode.