Assist feature aware double patterning decomposition

Christopher Cork; Levi Barnes; Gerard Luk-Pat

doi:10.1117/12.801562

17 October 2008 Assist feature aware double patterning decomposition

Christopher Cork, Levi Barnes, Gerard Luk-Pat

Proceedings Volume 7122, Photomask Technology 2008; 712224 (2008) https://doi.org/10.1117/12.801562
Event: SPIE Photomask Technology, 2008, Monterey, California, United States

Abstract

Double patterning has gained prominence as the most likely lithographic methodology to help keep Moore's law going towards 32nm 1/2 pitch lithography. While solutions, to date, have focused mainly on gap splitting to avoid minimum spacing violations, the decomposition should, ideally, also attempt to optimize the process window of the decomposed masks. A major contributor to process window sensitivity is the correct placement of sub-resolvable assist features. These features are placed once the polygons of each mask are defined, i.e. post decomposition. If some awareness of this downstream process step is made available to the double patterning decomposition stage, then a more robust decomposition can be achieved.

Citation Download Citation

Christopher Cork, Levi Barnes, and Gerard Luk-Pat "Assist feature aware double patterning decomposition", Proc. SPIE 7122, Photomask Technology 2008, 712224 (17 October 2008); https://doi.org/10.1117/12.801562

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available