An investigation of EUV lithography defectivity

Kevin D. Cummings; Thomas Laursen; Bill Pierson; Sang-in Han; Robert Watso; Youri van Dommelen; Brian Lee; Yunfei Deng; Bruno La Fontaine; Thomas Wallow; Uzo Okoroanyanwu; Obert Wood; Anna Tchikoulaeva; Christian Holfeld; Jan Hendrick Peters; Chiew-seng Koay; Karen Petrillo; Tony DiBiase; Sumanth Kini; Hiroyuki Mizuno

doi:10.1117/12.801528

17 October 2008 An investigation of EUV lithography defectivity

Kevin D. Cummings, Thomas Laursen, Bill Pierson, Sang-in Han, Robert Watso, Youri van Dommelen, Brian Lee, Yunfei Deng, Bruno La Fontaine, Thomas Wallow, Uzo Okoroanyanwu, Obert Wood, Anna Tchikoulaeva, Christian Holfeld, Jan Hendrick Peters, Chiew-seng Koay, Karen Petrillo, Tony DiBiase, Sumanth Kini, Hiroyuki Mizuno

Author Affiliations +

Proceedings Volume 7122, Photomask Technology 2008; 71222G (2008) https://doi.org/10.1117/12.801528
Event: SPIE Photomask Technology, 2008, Monterey, California, United States

Abstract

We have used ASML's full field step-and-scan exposure tool for extreme ultraviolet lithography (EUVL), known as an Alpha Demo Tool, to investigate one of the critical issues identified for EUVL, defectivity associated with EUV masks. The main objective for this work was to investigate the infrastructure currently in place to examine defects on a EUV reticle and identify their consequence in exposed resist. Unlike many previous investigations this work looks at naturally occurring defects in a EUV exposed metal layer from a 45 nm node device. The EUV exposure was also integrated into a standard process flow where the other layers were patterned using more conventional 193-nm lithography techniques. This presentation correlates reticle level defectivity to resulting wafer exposures. Defect inspection data from both the 28xx family of KLA-Tencor wafer inspection tool and Terascan reticle inspection tools are presented. Defect populations were characterized with a KLA 5200 Review SEM. Observed defectivity modes were analyzed using both conventional defect inspection methodology as well as advanced techniques in order to gain further insight. We find good correlations between reticle level defects and the resulting wafer exposure defects.

Citation Download Citation

Kevin D. Cummings, Thomas Laursen, Bill Pierson, Sang-in Han, Robert Watso, Youri van Dommelen, Brian Lee, Yunfei Deng, Bruno La Fontaine, Thomas Wallow, Uzo Okoroanyanwu, Obert Wood, Anna Tchikoulaeva, Christian Holfeld, Jan Hendrick Peters, Chiew-seng Koay, Karen Petrillo, Tony DiBiase, Sumanth Kini, and Hiroyuki Mizuno "An investigation of EUV lithography defectivity", Proc. SPIE 7122, Photomask Technology 2008, 71222G (17 October 2008); https://doi.org/10.1117/12.801528

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE