Study of x-ray lithography mask distortion during electron-beam writing

Hongyan Shang; Yongkun Wang

doi:10.1117/12.807384

13 October 2008 Study of x-ray lithography mask distortion during electron-beam writing

Hongyan Shang, Yongkun Wang

Proceedings Volume 7129, Seventh International Symposium on Instrumentation and Control Technology: Optoelectronic Technology and Instruments, Control Theory and Automation, and Space Exploration; 712909 (2008) https://doi.org/10.1117/12.807384
Event: Seventh International Symposium on Instrumentation and Control Technology, 2008, Beijing, China

Abstract

Three-dimensional finite element model was developed to simulate the X-ray lithography mask distortion during electron-beam writing (EBW). Equivalent heat flux density method was proposed and the transient thermal stress simulation was done. The results show that the in-plane distortion (IPD) of the mask fluctuates with the time. The maximum value is 8.24 nm, and the direction is deviated from the electron beam center. The maximum out-of-plane distortion (OPD) is 9.75μm. The direction is normal to the pattern window, and occurred in the center of the beam center.

Citation Download Citation

Hongyan Shang and Yongkun Wang "Study of x-ray lithography mask distortion during electron-beam writing", Proc. SPIE 7129, Seventh International Symposium on Instrumentation and Control Technology: Optoelectronic Technology and Instruments, Control Theory and Automation, and Space Exploration, 712909 (13 October 2008); https://doi.org/10.1117/12.807384

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