Paper
30 December 2008 Effect of thermal annealing on laser damage resistance of KDP at 3ω
Author Affiliations +
Abstract
In order to characterize the effect of thermal annealing on laser damage resistance of KDP, several combinations of laser conditioning and thermal annealing were applied to two SHG KDP samples. One sample was tested at 3ω, 16ns and the other one at 3ω, 2.5ns. Results show that whereas thermal annealing improves laser damage for a 16ns pulse, no effect can be measured at a pulse length of 2.5ns. Combining laser conditioning and thermal annealing has a stronger effect on laser damage resistance than laser conditioning alone, even for a 2.5ns pulse length for which thermal annealing was found to have little or no influence. It was also found that for a short pulse length maximum gain was obtained when thermal annealing was applied after laser conditioning.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
François Guillet, Bertrand Bertussi, David Damiani, Laurent Lamaignère, Audrey Surmin, K. Vallé, and Cédric Maunier "Effect of thermal annealing on laser damage resistance of KDP at 3ω", Proc. SPIE 7132, Laser-Induced Damage in Optical Materials: 2008, 713211 (30 December 2008); https://doi.org/10.1117/12.804297
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Annealing

Resistance

Laser induced damage

Thermal effects

Crystals

Second-harmonic generation

Pulsed laser operation

Back to Top