AlGaInAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YVO4 laser at 1064 nm

S. C. Huang; H. L. Chang; K. W. Su; Y. F. Chen; K. F. Huang

doi:10.1117/12.803422

18 November 2008 AlGaInAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YVO4 laser at 1064 nm

S. C. Huang, H. L. Chang, K. W. Su, Y. F. Chen, K. F. Huang

Author Affiliations +

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71351T (2008) https://doi.org/10.1117/12.803422
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

We report the use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.

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S. C. Huang, H. L. Chang, K. W. Su, Y. F. Chen, and K. F. Huang "AlGaInAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YVO4 laser at 1064 nm", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71351T (18 November 2008); https://doi.org/10.1117/12.803422

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