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18 November 2008 White light emission from InGaN CdSe/CdS/ZnS quantum dots LEDs
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71353E (2008) https://doi.org/10.1117/12.803075
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
Abstract
II-VI family semiconductor nanocrystals have attracted most interests in nanometer science and technology recently. The quantum dots have many applications in optoelectronic device such as LEDs for its superior properties resulting from the three-dimensional confinement effect of its carrier. Hybrid inorganic/organic electroluminescent devices were demonstrated using monolayers of CdSe/ZnS core/shell QDs sandviched between two organic thin films. However, the luminous efficiency of the hybrid in organic/organic device was very low. In this paper, an intermediate shell of CdS was used as the lattice parameter adaptation layer to improve the core/shell interface quality the luminous efficiency of the core/shell QDs. White light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chips with luminescent colloidal core/shell CdSe/CdS/ZnS quantum dots (QDs). Photoluminescence of CdSe/CdS/ZnS quantum dots demonstrated high photoluminescence efficiency with a quantum yield more than 44%, and size-tunable emission wavelengths from 380 to 620nm. WLED was successfully assembled by blue InGaN chip plus green and red emitting CdSe/CdS/ZnS QDs. The InGaN chip white-light-emitting diodes with CdSe/CdS/ZnS quantum dots as the emitting layer are potentially useful in illumination and display applications.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changyu Shen, Yi Yang, Shangzhong Jin, and Jiangzhou Ming "White light emission from InGaN CdSe/CdS/ZnS quantum dots LEDs", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353E (18 November 2008); https://doi.org/10.1117/12.803075
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