Analysis and simulation of process parameters for epitaxy of InP-based compound semiconductor materials

Shuquan Zhong; Xiaomin Ren; Yongqing Huang; Qi Wang; Hui Huang

doi:10.1117/12.803262

18 November 2008 Analysis and simulation of process parameters for epitaxy of InP-based compound semiconductor materials

Shuquan Zhong, Xiaomin Ren, Yongqing Huang, Qi Wang, Hui Huang

Author Affiliations +

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 71353M (2008) https://doi.org/10.1117/12.803262
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

Under a wide range of process parameters, such as varying total flow rate of gas inlet, chamber pressure, growth temperature, wafer carrier rotation, it has been finally obtained the favorable conditions of the better uniform distributions of steady flow and thermal field profiles for growing high quality compound semiconductor materials inside the reactor. Then, the long- wavelength metamorphic In_0.53Ga_0.47As PIN photodetectors grown on semi-insulating GaAs substrates are successfully demonstrated by low temperature InP buffer technology. The active area of this photodetector is 50μm×50μm and the thickness of In_0.53Ga_0.47As adsorption layer is 300 nm. The 3dB bandwidth of frequency response reaches 6GHz. The responsivity of 0.12 A/W to 1550 nm optical radiation, corresponding to the external quantum efficiency of 9.6%, was achieved.

Citation Download Citation

Shuquan Zhong, Xiaomin Ren, Yongqing Huang, Qi Wang, and Hui Huang "Analysis and simulation of process parameters for epitaxy of InP-based compound semiconductor materials", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 71353M (18 November 2008); https://doi.org/10.1117/12.803262

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