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18 November 2008 Strain engineered quantum dots for long wavelength emission
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Proceedings Volume 7135, Optoelectronic Materials and Devices III; 713547 (2008)
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China
A systematic investigation about the strain distributions around the InAs/GaAs quantum dots using the finite element method is presented. A special attention is paid to the influence of InGaAs strain reducing layer. The numerical results show that the horizontal, vertical strains components and the biaxial strain are reinforced in the InAs quantum dot due to the strain-reducing layer. But the hydrostatic strain in the quantum dot is reduced. In the framework of eight-band k • p theory, we studied the band edge modifications due to the presence of strain reducing layer. Results demonstrate that, the strain reducing layer yield the decreasing of band gap, i.e., the redshift phenomenon observed in experiments. Our calculated results show that the degree of the redshift will increase with increasing of the thickness of strain-reducing layer. In calculating the influence of SRL, we discussed two circumistances: the height of the strain reducing layer larger and smaller than that of QD. The composition of the strain reducing layer on the degree of redshif is also investigated. The calculated results can explain the experiment results in literatures, and further confirmed that the long wavelength emission used for optical fiber communications is realizable by adjusting the dependent parameters.
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Yumin Liu and Zhongyuan Yu "Strain engineered quantum dots for long wavelength emission", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713547 (18 November 2008);

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