Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning

Daniel Chen; Damian Chen; Ray Yen; Mingjen Cheng; Andy Lan; Rajesh Ghaskadvi

doi:10.1117/12.804563

4 December 2008 Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning

Daniel Chen, Damian Chen, Ray Yen, Mingjen Cheng, Andy Lan, Rajesh Ghaskadvi

Author Affiliations +

Proceedings Volume 7140, Lithography Asia 2008; 71400R (2008) https://doi.org/10.1117/12.804563
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

Identifying hotspots--structures that limit the lithography process window--become increasingly important as the industry relies heavily on RET to print sub-wavelength designs. KLA-Tencor's patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout--to obtain the best sensitivity (b) Design Based Binning--for pattern repeater analysis (c) Intelligent sampling--for the best DOI sampling rate. This paper evaluates two different analysis strategies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.

Citation Download Citation

Daniel Chen, Damian Chen, Ray Yen, Mingjen Cheng, Andy Lan, and Rajesh Ghaskadvi "Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning", Proc. SPIE 7140, Lithography Asia 2008, 71400R (4 December 2008); https://doi.org/10.1117/12.804563

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