An imaging system for extended ArF immersion lithography

Tomoyuki Matsuyama; Yasuhiro Ohmura; Toshiharu Nakashima; Yusaku Uehara

doi:10.1117/12.804658

4 December 2008 An imaging system for extended ArF immersion lithography

Tomoyuki Matsuyama, Yasuhiro Ohmura, Toshiharu Nakashima, Yusaku Uehara

Proceedings Volume 7140, Lithography Asia 2008; 714013 (2008) https://doi.org/10.1117/12.804658
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

The k1 factor continues to be driven downwards, even beyond its theoretical limit 0.25 in order to enable the 32 nm feature generation and beyond. Due to the extremely small process window that will be available for such extremely demanding imaging challenges, it is necessary that each unit contributing to the imaging system be driven to its ultimate performance capability. The units in such an integrated imaging system include the projection lens, illumination optics, in-situ metrology tooling, reticle stage control, and wafer stage control. In this paper we are going to discuss the required functions especially for projection lens and illumination system and how to optimally control each unit in cooperation with the others in order to achieve the goal of 32 nm patterning and beyond.

Citation Download Citation

Tomoyuki Matsuyama, Yasuhiro Ohmura, Toshiharu Nakashima, and Yusaku Uehara "An imaging system for extended ArF immersion lithography", Proc. SPIE 7140, Lithography Asia 2008, 714013 (4 December 2008); https://doi.org/10.1117/12.804658

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