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4 December 2008 Mask specification guidelines in spacer patterning technology
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Proceedings Volume 7140, Lithography Asia 2008; 714022 (2008) https://doi.org/10.1117/12.804744
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
We have studied both the mask CD specification and the mask defect specification for spacer patterning technology (SPT). SPT has the possibility of extending optical lithography to below 40nm half-pitch devices. Since SPT necessitates somewhat more complicated wafer process flow, the CD error and mask defect printability on wafers involve more process factors compared with conventional single-exposure process (SEP). This feature of SPT implies that it is very important to determine mask-related specifications for SPT in order to select high-end mask fabrication strategies; those are for mask writing tools, mask process development, materials, inspection tools, and so on. Our experimental studies reveal that both mask CD specification and mask defect specification are somehow relaxed from those in ITRS2007. This is most likely because SPT reduces mask CD error enhanced factor (MEF) and the reduction of line-width roughness (LWR).
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kohji Hashimoto, Hidefumi Mukai, Seiro Miyoshi, Shinji Yamaguchi, Hiromitsu Mashita, Yuuji Kobayashi, Kenji Kawano, and Takashi Hirano "Mask specification guidelines in spacer patterning technology", Proc. SPIE 7140, Lithography Asia 2008, 714022 (4 December 2008); https://doi.org/10.1117/12.804744
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