Paper
4 December 2008 Experimental proximity matching of ArF scanners
Joost Bekaert, L. Van Look, P. De Bisschop, J. Van de Kerkhove, G, Vandenberghe, K. Schreel, J. Menger, G. Schiffelers, E. Knols, H. van der Laan, R. Willekers
Author Affiliations +
Proceedings Volume 7140, Lithography Asia 2008; 714027 (2008) https://doi.org/10.1117/12.804670
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
IC manufacturers have a strong demand for transferring a working process from one scanner to another. In an ideal transfer, a reticle set that produces devices within specification on a certain scanner has the same performance on another exposure tool. In real life, however, reticles employ optical proximity correction (OPC) which incorporates by definition the inherent optical fingerprint of a specific exposure tool and process. In order to avoid the additional cost of developing a new OPC model and acquiring a new reticle for each exposure tool, IC manufacturers therefore wish to 'match' the optical fingerprint of their scanners as closely as possible. In this paper, we report on the matching strategy that we developed to perform a tool-to-tool matching. We present experimental matching results for several tool combinations at numerical apertures (NA) 0.75, 0.85 and 1.2. Matching of exposure tools is obtained by determining the sensitivities to scanner parameter variations like NA, Sigma, Focus Drilling, Ellipticity and Dose from wafer data and/or simulations. These sensitivities are used to calculate the optimal scanner parameters for matching the two tools.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joost Bekaert, L. Van Look, P. De Bisschop, J. Van de Kerkhove, G, Vandenberghe, K. Schreel, J. Menger, G. Schiffelers, E. Knols, H. van der Laan, and R. Willekers "Experimental proximity matching of ArF scanners", Proc. SPIE 7140, Lithography Asia 2008, 714027 (4 December 2008); https://doi.org/10.1117/12.804670
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KEYWORDS
Semiconducting wafers

Scanners

Reticles

Critical dimension metrology

Optical proximity correction

Cadmium

Optics manufacturing

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