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4 December 2008 Use of spin-on-hard mask materials for nano scale patterning technology
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Proceedings Volume 7140, Lithography Asia 2008; 71402Q (2008) https://doi.org/10.1117/12.804695
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On-Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask ) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-Hao Wu, Edward Y. Chang, Hwan-Sung Cheon, Sang Kyun Kim, Hyeon Mo Cho, Kyong-Ho Yoon, Jong Seob Kim, Tuwon Chang, and Seongho Shin "Use of spin-on-hard mask materials for nano scale patterning technology", Proc. SPIE 7140, Lithography Asia 2008, 71402Q (4 December 2008); https://doi.org/10.1117/12.804695
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