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4 December 2008 Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials
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Proceedings Volume 7140, Lithography Asia 2008; 71402V (2008)
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
In the current semiconductor industry, hardmasks have become essential for successful patterning in many applications. Silicon-based anti-reflective spin-on hardmask (Si-SOH), which can be built by spin-on coating, is desirable in terms of mass production throughput and cost of ownership. As the design rule shrinks, the thickness of photoresist also becomes thinner, which forces the thickness of Si-SOH to be thinner resulting in a tighter thickness margin. In this case, controlling of optical properties of Si-SOH is important in order to obtain low reflectivity in the exposure process. Previously, we reported papers on silicon-based anti-reflective spin-on hardmask materials for 193 nm lithography and immersion ArF lithography. In this paper, the technique for optimization of optical properties, especially n and k values, of Si-SOH is described. To control n and k values, several chromophores were screened and the ratio among them was optimized. Although the amount of chromophores increased and the silicon contents decreased, our etch resistance enhancement technique allowed Si-SOH to have sufficient etch resistance. Characterization of this Si-SOH and lithographic performance using these materials are described in detail.
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Sang Kyun Kim, Hyeon Mo Cho, Changsoo Woo, Sang Ran Koh, Mi-Young Kim, Hui Chan Yoon, Woojin Lee, Seung-Wook Shin, Jong-Seob Kim, and Tuwon Chang "Optimization of optical properties of silicon-based anti-reflective spin-on hardmask materials", Proc. SPIE 7140, Lithography Asia 2008, 71402V (4 December 2008);

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