Analysis of adsorption effect of absorbent and threshold limit value (TLV) of Q-time for 193nm ArF reticle haze resistance

Fu-Sheng Chu; Shean-Hwan Chiou

doi:10.1117/12.803784

4 December 2008 Analysis of adsorption effect of absorbent and threshold limit value (TLV) of Q-time for 193nm ArF reticle haze resistance

Fu-Sheng Chu, Shean-Hwan Chiou

Author Affiliations +

Proceedings Volume 7140, Lithography Asia 2008; 71403F (2008) https://doi.org/10.1117/12.803784
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

Haze occurrence is time-dependent, also known as degradation Haze. Thereby optimum time of purge operation became a significant reference index of mask operation for Haze resistance in fabrication. In advanced study, a concept of mask Q-time ("Q-time" is abbreviated from Queue time) was conducted to analyze the optimization of purge operation. TLV ("TLV" is abbreviated from Threshold Limit Value) of Q-time is a novel review index, a crucial index for Haze prevention and control originated in a new analysis method that have never published. Mask Q-time analysis method includes two analytic models, one of models is HDB ("HDB" is abbreviated from Haze Detonation Baseline) for the analysis of optimum purge operation in Haze defect resistance before Haze occurrence, HDB was defined by the ratio of wafer accumulation over the TLV of HDB (wafer/wafer) and the ratio of wafer dispersion over the TLV of HDB (frequency/frequency). The other analytic model, HGB ("HGB" is abbreviated from Haze Growth Baseline) for the analysis of optimum collocation of absorbent adsorption and purge operation in Haze defect growth control after Haze occurrence, HGB was defined by two factors, the ratio of wafer exposure(min/min) and the ratio of mask purge operation(min/min).

Citation Download Citation

Fu-Sheng Chu and Shean-Hwan Chiou "Analysis of adsorption effect of absorbent and threshold limit value (TLV) of Q-time for 193nm ArF reticle haze resistance", Proc. SPIE 7140, Lithography Asia 2008, 71403F (4 December 2008); https://doi.org/10.1117/12.803784

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