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9 February 2009Fabrication of the linearly chirped phase mask for working in 248 nm wavelength
Using chirped phase mask to fabricate chirped fiber Bragg gratings (CFBG) is a very important method. In this paper, a
linearly chirped phase mask with the period of 1000nm in the center, ruled area 100×10mm2 and 1nm/mm chirp rate has
been fabricated by a new technique, which combines holographic-ion beam etching and reactive ion beam etching. This
involves two main steps: formation of a grating mask by holographic interference exposure and development, and
transferring it into the substrate to form a permanent phase mask by both ion beam etching and reactive ion beam
etching. Experimental measurements show that the zero order diffraction efficiency is less than 2% and the plus and
minus first-order diffraction efficiency is more than 35%; the nonlinear coefficient is 1.6%. Theoretical analysis also
indicates that these phase masks can be used to fabricate the UV written CFBG.
Quan Liu,Jianhong Wu, andWeipeng Yang
"Fabrication of the linearly chirped phase mask for working in 248 nm wavelength", Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 71580F (9 February 2009); https://doi.org/10.1117/12.806917
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Quan Liu, Jianhong Wu, Weipeng Yang, "Fabrication of the linearly chirped phase mask for working in 248 nm wavelength," Proc. SPIE 7158, 2008 International Conference on Optical Instruments and Technology: Microelectronic and Optoelectronic Devices and Integration, 71580F (9 February 2009); https://doi.org/10.1117/12.806917