Reliability Considerations Of Si And GaAs Active Components In A Radiation Environment

Rama S Singh; Wilford D. Raburn

doi:10.1117/12.937483

23 February 1987 Reliability Considerations Of Si And GaAs Active Components In A Radiation Environment

Rama S Singh, Wilford D. Raburn

Proceedings Volume 0717, Reliability Considerations in Fiber Optic Applications; (1987) https://doi.org/10.1117/12.937483
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

The performance of silicon (Si) and gallium arsenide (GaAs) active components operating in a radiation environment is discussed. These components include diode detectors, Si MOSFETS and GaAs MESFETS. The radiation environments considered include total dose gamma, high dose rate gamma, high energy heavy particles and neutrons. The total dose effect of charge trapping and interface state generation in the Silicon dioxide due to total dose gamma is discussed. The large photocurrents due either to high dose rate gamma or high energy heavy particles are discussed. Some of the process optimizations used to enhance the radiation immunity in Si technology and their relevance to a better and more reliable fiber optic system are presented.

Citation Download Citation

Rama S Singh and Wilford D. Raburn "Reliability Considerations Of Si And GaAs Active Components In A Radiation Environment", Proc. SPIE 0717, Reliability Considerations in Fiber Optic Applications, (23 February 1987); https://doi.org/10.1117/12.937483

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