Deep-ultraviolet frequency converted optically pumped semiconductor laser

Yushi Kaneda; Tsuei-Lian Wang; J. M. Yarborough; Mahmoud Fallahi; Jerome V. Moloney; Masashi Yoshimura; Yusuke Mori; Takatomo Sasaki

doi:10.1117/12.811888

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27 February 2009 Deep-ultraviolet frequency converted optically pumped semiconductor laser

Yushi Kaneda, Tsuei-Lian Wang, J. M. Yarborough, Mahmoud Fallahi, Jerome V. Moloney, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki

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Proceedings Volume 7193, Solid State Lasers XVIII: Technology and Devices; 719318 (2009) https://doi.org/10.1117/12.811888
Event: SPIE LASE: Lasers and Applications in Science and Engineering, 2009, San Jose, California, United States

Abstract

A frequency-converted optically pumped semiconductor laser (OPSL) is described. The 976-nm OPSL is frequency doubled intracavity and is forced to operate in single longitudinal mode. An external resonator, containing a cesium lithium borate crystal is locked to the 488-nm fundamental, generating the second harmonic at 244 nm. Continuous wave output in excess of 200 mW is generated.

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Yushi Kaneda, Tsuei-Lian Wang, J. M. Yarborough, Mahmoud Fallahi, Jerome V. Moloney, Masashi Yoshimura, Yusuke Mori, and Takatomo Sasaki "Deep-ultraviolet frequency converted optically pumped semiconductor laser", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719318 (27 February 2009); https://doi.org/10.1117/12.811888

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