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27 February 2009 Deep-ultraviolet frequency converted optically pumped semiconductor laser
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Abstract
A frequency-converted optically pumped semiconductor laser (OPSL) is described. The 976-nm OPSL is frequency doubled intracavity and is forced to operate in single longitudinal mode. An external resonator, containing a cesium lithium borate crystal is locked to the 488-nm fundamental, generating the second harmonic at 244 nm. Continuous wave output in excess of 200 mW is generated.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yushi Kaneda, Tsuei-Lian Wang, J. M. Yarborough, Mahmoud Fallahi, Jerome V. Moloney, Masashi Yoshimura, Yusuke Mori, and Takatomo Sasaki "Deep-ultraviolet frequency converted optically pumped semiconductor laser", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 719318 (27 February 2009); https://doi.org/10.1117/12.811888
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