Lead-chalcogenide VECSELs on Si and BaF2 for 5 &#956;m emission

M. Rahim; A. Khiar; F. Felder; M. Fill; D. Boye; H. Zogg

doi:10.1117/12.816359

27 February 2009 Lead-chalcogenide VECSELs on Si and BaF₂ for 5 μm emission

M. Rahim, A. Khiar, F. Felder, M. Fill, D. Boye, H. Zogg

Proceedings Volume 7193, Solid State Lasers XVIII: Technology and Devices; 71931G (2009) https://doi.org/10.1117/12.816359
Event: SPIE LASE: Lasers and Applications in Science and Engineering, 2009, San Jose, California, United States

Abstract

Optically pumped VECSELs (vertical external cavity surface emitting lasers) with above 5 μm emission wavelength were fabricated on BaF₂ and Si substrates. The active layer is just 1 - 2 μm thick PbTe or PbSe, and epitaxial PbEuTe/BaF₂ or PbSrTe/EuTe Bragg mirrors are employed. On BaF₂ substrates, output powers up to 260 mW pulsed and 3 mW cw at 100 K are obtained. The VECSEL presently operate up to 175 K with PbTe, and up to 215 K with PbSe active layers. On Si-substrates, maximum output was about 30 mW. There is room for considerable improvement with better adapted designs including improved heat-removal precautions.

Citation Download Citation

M. Rahim, A. Khiar, F. Felder, M. Fill, D. Boye, and H. Zogg "Lead-chalcogenide VECSELs on Si and BaF₂ for 5 μm emission", Proc. SPIE 7193, Solid State Lasers XVIII: Technology and Devices, 71931G (27 February 2009); https://doi.org/10.1117/12.816359

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