Translator Disclaimer
Paper
12 February 2009 Ultra-narrow long green lines for laser crystallization of Si
Author Affiliations +
Abstract
Advanced laser crystallization of Si films for large flat panel displays requires a narrow very homogeneous focus with at least 235 mm length and high depth of focus. Earlier we have reported on the development and application of an ultranarrow (5-9 μm) homogeneous line-shaped laser focus of 60 mm length for sequential lateral solidification (SLS) of Si. Key element of our line shaping system is an anisotropic mode transformation of the 2nd green harmonic of a Nd:YAG laser beam and its following homogenization for the long focus axis. The design and built-up of a much longer "green line" requires innovative optical approaches and very high precision optical manufacturing. We analyze in detail different process requirements, their physical compatibility (e.g. line width vs. depth of focus) and practical feasibility. To reach high energy densities in the long lines we design optical schemas bundling up to 8 beams of separate lasers.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikhail Ivanenko, Klaus Bagschik, Yuri Miklyaev, Alexei Mikhailov, Wyacheslaw Grimm, and Vitalij Lissotschenko "Ultra-narrow long green lines for laser crystallization of Si", Proc. SPIE 7194, Laser Resonators and Beam Control XI, 719402 (12 February 2009); https://doi.org/10.1117/12.808196
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top