You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
23 February 2009High-power IR laser in SMT package
Laser dies in an optical power range of 1-3 Watts are widely assembled in popular TO- packages. TO-packages suffer
from high thermal resistance and limited output power. Bad thermal contact between circuit boards and TO-devices can
cause overheating of laser chips, significantly reducing the operating life time. We developed a compact high heat-load
SMT package for an optical power up to 7 Watts in CW operation with good life time results.
The new package for high power laser chips combines highly efficient heat dissipation with Surface-mount technology.
A Direct-Bonded-Copper (DBC) substrate acts as a base plate for the laser chip and heat sink. The attached frame is used
for electrical contacting and acts as beam reflector where the laser light is reflected at a 45° mirror. In the application the
DBC base plate of the SMT-Laser is directly soldered to a Metal-Core-PCB by reflow soldering. The overall thermal
resistance from laser chip to the bottom of a MC-PCB was measured as low as 2.5 K/W. The device placement process
can be operated by modern high-speed mounting equipment. The direct link between device and MC-PCB allows CW
laser operation up to 6-7 watts at wavelengths of 808nm to 940nm without facing any overheating symptom like thermal
roll over. The device is suitable for CW and QCW operation. In pulsed operation short rise and fall times of <2ns have
been demonstrated.
New application fields like infrared illumination for sensing purposes in the automotive industry and 3D imaging
systems could be opened by this new technology.
The alert did not successfully save. Please try again later.
Benedikt Pritsch, Martin Behringer, Markus Arzberger, Christoph Wiesner, Robin Fehse, Jörg Heerlein, Josip Maric, Wojciech Giziewicz, "High-power IR laser in SMT package," Proc. SPIE 7198, High-Power Diode Laser Technology and Applications VII, 71980F (23 February 2009); https://doi.org/10.1117/12.810143