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24 February 2009 Synthesis of nano-grained MnO2 thin films by laser ablation
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Manganese dioxide (MnO2) is considered as one of the most attractive compound among the manganese oxide phases due to its fundamental chemical and physical properties, its use in energy-storage devices, electrochemical applications, and biosensors. There have been limited attempts to grow high quality MnO2 thin films where high pressure and low substrate temperature are targeted to promote the formation of this phase. In this work, we have exploited the flexibility of Pulsed Laser Deposition (PLD) in order to synthesize thin films of MnO2 on Si substrates by laser ablation of a MnO target in oxygen gas ambient. Substrate temperature was varied from 25 to 800 °C aiming to grow films of good crystalline quality while investigating the temperature range where MnO2 phase is expected to be stable. We have also investigated the effect of oxygen pressure which was varied from 10 to 500 mTorr. X-ray diffraction and Fourier Transform Infra-Red analyses have confirmed the formation of the MnO2 phase for pressures above 250 mTorr, and an optimal deposition temperature of 500 °C, while Mn2O3 is obtained in the range between 550 and 650 °C. Further increase in deposition temperature led to pure Mn3O4 films. Atomic Force Microscopy imaging confirms the nanograined surface structure of the MnO2 films, with a typical grain size of 30 nm.
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Malek Tabbal, Maya Abi-Akl, Samih Isber, Elisar Majdalani, and Theodore Christidis "Synthesis of nano-grained MnO2 thin films by laser ablation", Proc. SPIE 7201, Laser Applications in Microelectronic and Optoelectronic Manufacturing VII, 720104 (24 February 2009);

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