Micro ID marking for semiconductor chips: recent progress and future prospects

Yoshiaki Kokushi; Yoshinori Saitou; Akira Mori

doi:10.1117/12.808503

24 February 2009 Micro ID marking for semiconductor chips: recent progress and future prospects

Yoshiaki Kokushi, Yoshinori Saitou, Akira Mori

Proceedings Volume 7202, Laser-based Micro- and Nanopackaging and Assembly III; 72020N (2009) https://doi.org/10.1117/12.808503
Event: SPIE LASE: Lasers and Applications in Science and Engineering, 2009, San Jose, California, United States

Abstract

When the frequency, pulse width, the beam profile, and energy density of the laser were controlled, then irradiated onto the silicon wafer with a beam of 15μm diameter or less, we observed that convex dot with a height of 100-300 nano- meters was formed. [1] The laser energy density through which the convex dot was formed was below 3.8J/cm². In the semiconductor excitation laser, the pulse width was 40nsec-150nsec; the wavelength was 532 nm. [2]We developed equipment by using convex dots that was able to form 2D minute code of 16x16 dots in 100μm x100μm area in each IC chip on the silicon wafer without particle generation .

Citation Download Citation

Yoshiaki Kokushi, Yoshinori Saitou, and Akira Mori "Micro ID marking for semiconductor chips: recent progress and future prospects", Proc. SPIE 7202, Laser-based Micro- and Nanopackaging and Assembly III, 72020N (24 February 2009); https://doi.org/10.1117/12.808503

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