Nonlinear THz response of n-type GaAs

Michael Woerner; Willhelm Kuehn; Peter Gaal; Klaus Reimann; Thomas Elsaesser; Rudolf Hey

doi:10.1117/12.811485

6 February 2009 Nonlinear THz response of n-type GaAs

Michael Woerner, Willhelm Kuehn, Peter Gaal, Klaus Reimann, Thomas Elsaesser, Rudolf Hey

Proceedings Volume 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII; 72140W (2009) https://doi.org/10.1117/12.811485
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Using a novel high-field THz source we performed various ultrafast experiments on n-type GaAs. Both nonlinear THz experiments driving resonantly the 1S-2P donor impurity transition and nonlinear transport experiments on free carriers in the conduction band of GaAs give new insights into the dynamics of localized and delocalized electrons surprisingly different from the well-known linear Drude theory.

Citation Download Citation

Michael Woerner, Willhelm Kuehn, Peter Gaal, Klaus Reimann, Thomas Elsaesser, and Rudolf Hey "Nonlinear THz response of n-type GaAs", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 72140W (6 February 2009); https://doi.org/10.1117/12.811485

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