Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors

J. Wang; I. Cotoros; D. S. Chemla; X. Liu; J. K. Furdyna; J. Chovan; I. E. Perakis

doi:10.1117/12.809945

Translator Disclaimer

6 February 2009 Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors

J. Wang, I. Cotoros, D. S. Chemla, X. Liu, J. K. Furdyna, J. Chovan, I. E. Perakis

Author Affiliations +

Proceedings Volume 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII; 721412 (2009) https://doi.org/10.1117/12.809945
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.

Citation Download Citation

J. Wang, I. Cotoros, D. S. Chemla, X. Liu, J. K. Furdyna, J. Chovan, and I. E. Perakis "Memory effects in femtosecond collective spin rotation in ferromagnetic semiconductors", Proc. SPIE 7214, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII, 721412 (6 February 2009); https://doi.org/10.1117/12.809945

ACCESS THE FULL ARTICLE