High-power AlGaN/GaN HFETs on Si substrates for power-switching applications

Nariaki Ikeda; Jiang Lee; Syuusuke Kaya; Masayuki Iwami; Takehiko Nomura; Sadahiro Katoh

doi:10.1117/12.807432

16 February 2009 High-power AlGaN/GaN HFETs on Si substrates for power-switching applications

Nariaki Ikeda, Jiang Lee, Syuusuke Kaya, Masayuki Iwami, Takehiko Nomura, Sadahiro Katoh

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721602 (2009) https://doi.org/10.1117/12.807432
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Epitaxial growth technology for GaN devices on large-diameter Si substrate has been studied in this paper, which is essential for device cost reduction. In an effort to improve the buffer breakdown voltage for increasing the breakdown voltage of the device, carbon concentration in the GaN layer was controlled to find that the carbon concentration significantly contributed to buffer breakdown voltage improvements. Device performance was evaluated for the devices with an AlGaN/GaN HFET structure on Si substrate, and it was shown that the performance was equivalent to that of the device on sapphire substrate. A large-area device having this structure was fabricated in order to confirm its potential as a power device, and a current capacity of 120 A or more and a breakdown voltage of 1.8 kV were achieved. On the other hand, with respect to the problematical issue of current collapse in GaN HFETs, the HFET structure on Si substrate has resulted in a significant improvement compared with the structure on sapphire substrate, thus realizing a highperformance device that does not show a salient current collapse up to 1 kV.

Citation Download Citation

Nariaki Ikeda, Jiang Lee, Syuusuke Kaya, Masayuki Iwami, Takehiko Nomura, and Sadahiro Katoh "High-power AlGaN/GaN HFETs on Si substrates for power-switching applications", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721602 (16 February 2009); https://doi.org/10.1117/12.807432

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available