Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy

Hongping Zhao; Hua Tong; Alexandra M. Driscoll; Muhammad Jamil; G. S. Huang; Nelson Tansu

doi:10.1117/12.808695

Translator Disclaimer

18 February 2009 Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy

Hongping Zhao, Hua Tong, Alexandra M. Driscoll, Muhammad Jamil, G. S. Huang, Nelson Tansu

Author Affiliations +

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72160L (2009) https://doi.org/10.1117/12.808695
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The growths of droplet-free narrow-bandgap InN semiconductors on Ga-polar and N-polar GaN templates on c-plane sapphire substrates were performed by pulsed-MOVPE growth techniques. Under the optimum In-polar InN growth conditions, the carrier mobility and n-type carrier concentration were measured as 681 cm²/(V.sec) and 1.5×10¹⁹ cm^-3, respectively. The room-temperature photoluminescence measurements of optimized In-polar grown by pulsed-MOVPE technique resulted in peak wavelength at 0.76 eV. The growth of N-polar InN grown on the N-polar GaN template is discussed and compared to that of the In-polar InN.

Citation Download Citation

Hongping Zhao, Hua Tong, Alexandra M. Driscoll, Muhammad Jamil, G. S. Huang, and Nelson Tansu "Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160L (18 February 2009); https://doi.org/10.1117/12.808695

ACCESS THE FULL ARTICLE