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16 February 2009 Fabrication of position-controlled InN nanocolumns by ECR-MBE
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Abstract
Position controlled InN nanocolumns were fabricated by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) on hole-patterned GaN template by focused ion beam (FIB). Dependences of morphological changes in InN nanocolumn on V/III ratio and hole size were investigated. It is found that growth with a higher V/III ratio and a larger hole size resulted in the multiple formation of InN nanocolumns in one hole. By varying the hole density on the GaN template, we succeeded to change the density of InN nanocolumn by one order of magnitude from about 100/μm2 to 9/μm2. InN nanocolumn showed luminescence with peak energy of 0.74 eV by cathodoluminescence measurement.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Araki, D. Fukuoka, H. Tamiya, S. Harui, H. Miyake, K. Hiramatsu, and Y. Nanishi "Fabrication of position-controlled InN nanocolumns by ECR-MBE", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160N (16 February 2009); https://doi.org/10.1117/12.811764
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