Piezoelectric quantum 1/f noise in AlGaN HFETs and reliability

Peter H. Handel; Hadis Morkoç

doi:10.1117/12.812243

19 February 2009 Piezoelectric quantum 1/f noise in AlGaN HFETs and reliability

Peter H. Handel, Hadis Morkoç

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 72160R (2009) https://doi.org/10.1117/12.812243
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

The QED quantum 1/f noise formulas have been recently refined for the case of AlGaN/GaN HFETs and FETs through a better definition of the coherence parameter s, with much better agreement with the experiment. Indeed, for a FET/HFET width w>>L>t, this yielded s≈πnrtLlog(w/2L) instead of the old s=2nrtw formula. Here we generalize this basic result for the first time to a finite piezoelectric case. Here L= source to drain length, t is the thickness (depth) of the channel, n is the concentration of carriers, π3.1416, and r=2.8•10-13 cm is the classical radius of the electron. In piezoelectric materials, particularly those also showing ferroelectric spontaneous polarization, transversal phonons are the massless quanta leading to large piezoelectric, or lattice-dynamic, quantum 1/f effects, conventional and coherent. As in the usual QED case, the parameter s' yields the observed 1/f noise as a weighted sum of conventional and coherent quantum 1/f effects. The HFET piezocoherence weighting parameter s', derived here is (gN'h/m*v_s)(v_s/u)³ F(u/vs)t/12w, with N'=nLt, vs the piezophonon speed, u the drift velocity, and F(x) is a function defined earlier, equal to (2/3)x³ for x<<1. This s' is increasing, ~t², important for reliability and device optimization. For HFET stability, a slower decrease of conductivity than of polarization is found to be needed for stability along the large device width, when the temperature increases.

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Peter H. Handel and Hadis Morkoç "Piezoelectric quantum 1/f noise in AlGaN HFETs and reliability", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72160R (19 February 2009); https://doi.org/10.1117/12.812243

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KEYWORDS

Phonons

Magnetism

Field effect transistors

Gallium nitride

Acoustics

Reliability

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