Paper
16 February 2009 Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K
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Abstract
In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/GaN DBRs in the whole structure, the lasing action of optically pumped GaN-based VCSELs with hybrid mirrors has been observed at room temperature. Due to the excellent results of optically pumped GaN-based VCSELs with hybrid mirrors, we further demonstrated the lasing behavior of GaN-based VCSELs by continuous-wave current injection at 77 K. The laser has one dominated blue wavelength located at 462 nm with a linewidth of about 0.15 nm and the threshold injection current at 1.4 mA. The divergence angle and polarization ratio of the GaN-based VCSELs with hybrid mirrors are about 11.7° and 80%, respectively. A larger spontaneous coupling efficiency of about 7.5×10-2 was also measured.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. C. Kuo, S. W. Chen, T. T. Kao, C. C. Kao, J. R. Chen, T. C. Lu, and S. C. Wang "Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 72161A (16 February 2009); https://doi.org/10.1117/12.808644
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KEYWORDS
Vertical cavity surface emitting lasers

Gallium nitride

Optical pumping

Reflectivity

Mirrors

Laser damage threshold

Optical microcavities

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