Multi-color light-emitting diodes based on GaN microstructures

M. Funato; Y. Kawakami; Y. Narukawa; T. Mukai

doi:10.1117/12.808641

18 February 2009 Multi-color light-emitting diodes based on GaN microstructures

M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai

Proceedings Volume 7216, Gallium Nitride Materials and Devices IV; 721624 (2009) https://doi.org/10.1117/12.808641
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

Monolithic multi-color light-emitting diodes (LEDs) based on micro-structured InGaN/GaN quantum wells are demonstrated. The microstructure is created through regrowth on SiO2 mask stripes along the [1¯100] direction and consists of (0001) and {11¯22} facets. The LEDs exhibit polychromatic emission, including white, due to the additive color mixture of facet-dependent emission colors. Altering the growth conditions and mask geometry easily controls the apparent emission color. Simulations predict high light extraction efficiencies due to their three-dimensional structures. Furthermore, we demonstrate that the apparent emission colors can externally be controlled over a wide spectral range that encompasses green to blue or white at a color temperature of 4000 K to blue along the Planckian locus. The controllability relies on the facet-dependent polychromatic emissions; the pulsed current operation with the appropriate duties varies their relative intensities and the consequent apparent colors without seriously affecting the total number of emitted photons, particularly for the blue to green variation. The proposed LEDs can be fabricated through a simple process and, therefore, may be a key device for advanced solid-state lighting.

Citation Download Citation

M. Funato, Y. Kawakami, Y. Narukawa, and T. Mukai "Multi-color light-emitting diodes based on GaN microstructures", Proc. SPIE 7216, Gallium Nitride Materials and Devices IV, 721624 (18 February 2009); https://doi.org/10.1117/12.808641

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